? 2008 ixys corporation, all rights reserved symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv ces i c = 250 a, v ge = 0v 300 v v ge(th) i c = 250 a, v ce = v ge 3.0 5.0 v i ces v ce = v ces 10 a v ge = 0v t j = 125 c 500 a i ges v ce = 0v, v ge = 20v 100 na v ce(sat) i c = 100a, v ge = 15v, note 1 1.35 1.7 v t j = 125 c 1.40 v ds100007(07/08) IXGH100N30B3 preliminary technical information v ces = 300v i c110 = 100a v ce(sat) 1.7v t fi(typ) = 33ns genx3 tm 300v igbt medium speed low vsat pt igbts for 10-50 khz switching symbol test conditions maximum ratings v ces t j = 25 c to 150 c 300 v v cgr t j = 25 c to 150 c, r ge = 1m 300 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25 c (limited by leads) 75 a i c110 t c = 110 c 100 a i cm t c = 25 c, 1ms 400 a ssoa v ge = 15v, t j = 125 c, r g = 2 i cm = 200 a (rbsoa) clamped inductive load @v ce 300v p c t c = 25 c 460 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c m d mounting torque 1.13 / 10 nm/lb.in. t l maximum lead temperature for soldering 300 c t sold 1.6mm (0.062 in.) from case for 10s 260 c weight 6 g g = gate c = collector e = emitter tab = collector to-247 (ixgh) g c e tab features z optimized for low switching losses z square rbsoa z international standard package advantages z high power density z low gate drive requirement applications z high frequency power inverters z ups z motor drives z smps z pfc circuits z battery chargers z welding machines z lamp ballasts
ixys reserves the right to change limits, test conditions, and dimensions. IXGH100N30B3 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = 50a, v ce = 10v, note 1 45 77 s c ies 5010 pf c oes v ce = 25v, v ge = 0v, f = 1mhz 370 pf c res 93 pf q g 166 nc q ge i c = 100a, v ge = 15v, v ce = 0.5 ? v ces 30 nc q gc 65 nc t d(on) 27 ns t r 51 ns t d(off) 110 ns t f 33 ns t d(on) 24 ns t r 61 ns t d(off) 124 ns t f 148 ns r thjc 0.27 c/w r thck 0.21 c/w resistive load, t j = 125 c i c = 50a, v ge = 15v v ce = 240v, r g = 2 resistive load, t j = 25 c i c = 50a, v ge = 15v v ce = 240v, r g = 2 notes: 1. pulse test, t 300 s; duty cycle, d 2%. ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 preliminary technical information the product presented herein is under development. the technical specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. ixys reserves the right to change limits, test conditions, and dimensions without notice. dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc e ? p to-247 (ixgh) outline 1 2 3 terminals: 1 - gate 2 - drain 3 - source tab - drain
? 2008 ixys corporation, all rights reserved IXGH100N30B3 fig. 1. output characteristics @ 25oc 0 20 40 60 80 100 120 140 160 180 200 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 v ce - volts i c - amperes v ge = 15v 13v 11v 9v 7v fig. 2. extended output characteristics @ 25oc 0 50 100 150 200 250 300 350 0123456 v ce - volts i c - amperes v ge = 15v 13v 11v 7v 9v fig. 3. output characteristics @ 125oc 0 20 40 60 80 100 120 140 160 180 200 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 v ce - volts i c - amperes v ge = 15v 13v 11v 7v 9v fig. 4. dependence of v ce(sat) on junction temperature 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade v ce(sat) - normalized v ge = 15v i c = 200a i c = 50a i c = 100a fig. 5. collector-to-emitter voltage vs. gate-to-emitter voltage 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 6 7 8 9 10 11 12 13 14 15 v ge - volts v ce - volts i c = 200a 100a 50a t j = 25oc fig. 6. input admittance 0 20 40 60 80 100 120 140 160 180 200 220 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 v ge - volts i c - amperes t j = 125oc 25oc - 40oc
ixys reserves the right to change limits, test conditions, and dimensions. IXGH100N30B3 ixys ref: g_200n30pb(75)7-05-08-d fig. 7. transconductance 0 10 20 30 40 50 60 70 80 90 100 110 120 130 0 20 40 60 80 100 120 140 160 180 200 i c - amperes g f s - siemens t j = - 40oc 125oc 25oc fig. 8. gate charge 0 2 4 6 8 10 12 14 16 0 20 40 60 80 100 120 140 160 180 q g - nanocoulombs v ge - volts v ce = 150v i c = 100a i g = 10ma fig. 9. reverse-bias safe operating area 0 20 40 60 80 100 120 140 160 180 200 220 50 100 150 200 250 300 350 v ce - volts i c - amperes t j = 125oc r g = 2 ? dv / dt < 10v / ns fig. 10. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - picofarads f = 1 mhz c ies c oes c res fig. 12. maximum transient thermal impedance 0.01 0.10 1.00 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w fig. 11. forward-bias safe operating area 10 100 1000 1 10 100 1000 v ce - volts i c - amperes t j = 150oc t c = 25oc single pulse v ce (sat) limit 1s 10s 100s 1ms
? 2008 ixys corporation, all rights reserved IXGH100N30B3 fig. 18. resistive turn-off switching times vs. gate resistance 145 150 155 160 165 170 175 180 185 190 2345678910 r g - ohms t f - nanoseconds 100 120 140 160 180 200 220 240 260 280 t d(off) - nanoseconds t f t d(off) - - - - t j = 125oc, v ge = 15v v ce = 240v i c = 50a i c = 100a fig. 14. resistive turn-on rise time vs. collector current 50 55 60 65 70 75 80 85 90 95 50 55 60 65 70 75 80 85 90 95 100 i c - amperes t r - nanoseconds r g = 2 ? v ge = 15v v ce = 240v t j = 125oc t j = 25oc fig. 15. resistive turn-on switching times vs. gate resistance 50 60 70 80 90 100 110 120 130 140 2345678910 r g - ohms t r - nanoseconds 23 24 25 26 27 28 29 30 31 32 t d(on) - nanoseconds t r t d(on) - - - - t j = 125oc, v ge = 15v v ce = 240v i c = 100a i c = 50a fig. 16. resistive turn-off switching times vs. junction temperature 20 40 60 80 100 120 140 160 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanoseconds 106 109 112 115 118 121 124 127 t d(off) - nanoseconds t f t d(off) - - - - r g = 2 ? , v ge = 15v v ce = 240v i c = 50a i c = 100a i c = 100a fig. 17. resistive turn-off switching times vs. collector current 20 40 60 80 100 120 140 160 180 50 55 60 65 70 75 80 85 90 95 100 i c - amperes t f - nanoseconds 104 107 110 113 116 119 122 125 128 t d(off) - nanoseconds t f t d(off) - - - - r g = 2 ? , v ge = 15v v ce = 240v t j = 125oc t j = 25oc fig. 13. resistive turn-on rise time vs. junction temperature 40 50 60 70 80 90 100 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanoseconds r g = 2 ? v ge = 15v v ce = 240v i c = 100a i c = 50a ixys ref: g_200n30pb(75)7-05-08-d
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